Infrared absorption in thick film resistors

dc.contributor.author	UluǦ, B.
dc.contributor.author	UluǦ, A.
dc.contributor.author	Şener, E.
dc.date.accessioned	2022-10-06T09:32:47Z
dc.date.available	2022-10-06T09:32:47Z
dc.date.issued	1995
dc.identifier.issn	00222461 (ISSN)
dc.identifier.uri	http://hdl.handle.net/11616/62802
dc.description.abstract	Infrared absorption in polymer and glass-based thick film resistors has been measured between 400 and 1500 cm-1. Sample structures are discussed on the basis of X-ray, Fourier transform-infrared and resistance-temperature data. It is shown that in polymer-based thick film resistors, the particulate phase is mostly responsible for the infrared absorption between 400 and 900 cm-1, whereas the infrared absorption at higher wave numbers is related to the continuous phase. In glass-based thick film resistors, absorption is mostly determined by the highly doped glass. The results indicate that thick film resistors can be used as an absorbent coating in the 400-1500 cm-1 region by suitable selection of the continuous and particulate phases. © 1995 Chapman & Hall.
dc.source	Journal of Materials Science
dc.title	Infrared absorption in thick film resistors

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