Interface structures and electrical properties of W/Si films grown by LPCVD

dc.contributor.author	Atici, Y.
dc.contributor.author	Yakinci, M.E.
dc.contributor.author	Uluǧ, B.
dc.contributor.author	Aydoǧdu, Y.
dc.date.accessioned	2022-10-06T09:35:27Z
dc.date.available	2022-10-06T09:35:27Z
dc.date.issued	1996
dc.identifier.issn	13000101 (ISSN)
dc.identifier.uri	http://hdl.handle.net/11616/62842
dc.description.abstract	Interface structures of W films on Si(100) substrates grown by LPCVD from a mixture of WF6, H2 and SiH4 (silane) gases at 280°C have been studied by transmission electron microscopy. Cross-sectional and plan-view samples were prepared to characterize the films. Consequently, according to the growth conditions, it has been observed that the W-Si interfaces are rough on a fine scale with some more extensive W protrusions in one of the samples which had an extended initial exposure to WF6. The W films have exhibited many randomly oriented grains ranging between 1000 and 4500 Å in size. Sheet resistance measurements have also been evaluated by means of four-point contact method at low temperatures (47-300 K) and it has been detected that the sheet resistance of a film decreases as the temperature decreases. © Tübi̇tak.
dc.source	Turkish Journal of Physics
dc.title	Interface structures and electrical properties of W/Si films grown by LPCVD

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