Tasyurek, Lutfi BilalKarakurt, HuseyinKilinc, Necmettin2026-04-042026-04-0420260360-31991879-3487https://doi.org/10.1016/j.ijhydene.2026.154148https://hdl.handle.net/11616/109573In this study, the electrical characterization of a heterojunction structure produced by coating powdered BaTiO3 from the perovskite family onto n-type silicon using the drop casting method was investigated at room temperature and as a function of temperature in a hydrogen atmosphere. The structural and optical characterization were evaluated using XRD analysis of the BaTiO3 powder, SEM - TEM images of the thin film structure, EDX spectrum, and UV analysis. The temperature-dependent current-voltage and alternating current changes of the nSi/BaTiO3 heterojunction were measured in a dry air atmosphere. According to the measurement results, the nSi/BaTiO3/Pt heterojunction device exhibited Schottky behavior. Furthermore, the sensor response of the heterojunction to hydrogen gas was calculated as 6.73. The hydrogen sensor response, measured at 50 degrees C at concentrations ranging from 500 ppm to 3%, increased in a concentration-dependent manner. Hydrogen detection measured at 100 degrees C shows a very good repeatability and stability at 20-min intervals in a 1% hydrogen atmosphere. The sensor response of n-Si/BaTiO3 heterojunction is about 3.71 +/- 4% in average for 70 days exposure to 1% hydrogen at 100 degrees C. Hydrogen gas tests were measured as a function of temperature and concentration changes. The obtained results are promising for the evaluation of the n-Si/BaTiO3 heterojunction as a hydrogen gas sensor.eninfo:eu-repo/semantics/closedAccessBaTiO3Hydrogen sensorHeterojunctionElectrical characterizationPerovskiteArticle22010.1016/j.ijhydene.2026.154148WOS:001701330900001Q1