Aksan, MAYakinci, MEBalci, Y2024-08-042024-08-0420051388-61501588-2926https://doi.org/10.1007/s10973-005-0801-8https://hdl.handle.net/11616/94063We have fabricated glasses in the Bi-2223 HTc superconductor system with Bi2Sr2Ca2Cu3-xErxO10+delta nominal composition, where x=0.5 and 1.0, by the glass-ceramic technique. Using an analysis developed for non-isothermal crystallization studies, information on some aspects of crystallization temperature and thermal properties has been obtained. The crystallization studies were made using DTA with several uniform rates. The calculations of crystallization activation energies, E-a, and the Avrami parameters, n, were made based on the non-isothermal kinetic theory of Kissinger and the Ozawa's equations. The DTA data of the samples showed that the first crystallization temperature, T-x1, increases and the second crystallization temperature, T-x2, decreases by increasing the Er concentration. This suggests that the Er substitution had significant effect on the glassification of the BSCCO material due to change on the surface nucleation and increased ionic activities at high temperature region. The activation energy for crystallization, E., of the samples was also showed an increase at high Er concentration case. However, the Avrami parameter, n, decreased from 2.5 to 1.7 for x=0.5 and 1.0 samples, respectively. This suggests that the growth mechanism is diffusion-controlled and three-dimensional parabolic growth takes place near the first crystallization temperature. The oxidization rates and the activation barrier for oxygen out-diffusion process, E, was calculated using the TG data. It was found that the total mass gain in the x=0.5 sample is comparably smaller than that of the x=1.0 sample. This shows that the oxygen absorption of the x=1.0 sample is faster than the x=0.5 sample, leading to increase in the oxidization rate in the x=1.0 material.eninfo:eu-repo/semantics/closedAccessAvrami parametercrystallization activation energyDTAHTc superconductivityoxidization ratesoxygen out-diffusion processTGArticle81241742310.1007/s10973-005-0801-82-s2.0-23844475123Q1WOS:000231218300028Q2