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    INFRARED-ABSORPTION IN THICK-FILM RESISTORS
    (Chapman Hall Ltd, 1995) ULUG, B; ULUG, A; SENER, E
    Infrared absorption in polymer and glass-based thick film resistors has been measured between 400 and 1500 cm(-1). Sam pie structures are discussed on the basis of X-ray, Fourier transform-infrared and resistance-temperature data. It is shown that in polymer-based thick film resistors, the particulate phase is mostly responsible for the infrared absorption between 400 and 900 cm(-1), whereas the infrared absorption at higher wave numbers is related to the continuous phase. In glass-based thick film resistors, absorption is mostly determined by the highly doped glass. The results indicate that thick film resistors can be used as an absorbent coating in the 400-1500 cm(-1) region by suitable selection of the continuous and particulate phases.
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    OBSERVATION OF ANOMALOUS RESISTIVE TRANSITION IN A NEW MIXED-PHASE Y3BA4CU7OX SYSTEM AROUND 125-260-K
    (Elsevier Science Bv, 1994) ULUG, A; ULUG, B; YAGBASAN, R
    Y3Ba4Cu7Ox and its eleven nearby compositions are prepared. The endothermic peaks around 950 degrees C are structured for some compositions. Most of the samples which are heat treated according to their own DTA/TGA results showed anomalous resistive transitions between 125 K and 260 K. XRD, SEM-EDAX and FTIR investigations reveal that the samples are multiphase. At least one of the IR absorption bands at 401, 405, 489 and 543 cm(-1) were observed in the spectra of the samples showing anomalous resistive transitions.