Investigation of structural, electrical and photoresponse properties of composite based Al/NiO:CdO/p-Si/Al photodiodes

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dc.authoridGurgenc, Ezgi/0000-0002-0653-4041
dc.authorwosidDikici, Aydın/A-4823-2018
dc.contributor.authorGurgenc, Ezgi
dc.contributor.authorDikici, Aydin
dc.contributor.authorAslan, Fehmi
dc.date.accessioned2024-08-04T20:59:42Z
dc.date.available2024-08-04T20:59:42Z
dc.date.issued2022
dc.departmentİnönü Üniversitesien_US
dc.description.abstractIn the present study, different molar ratios of (1:0, 0:1, 3:1, 1:1, and 1:3) NiO:CdO composite thin films were coated on p-Si by a dynamic sol-gel spin coating method. Structural characterizations of NiO:CdO thin films were performed by XRD, FE-SEM, and EDX analysis. The photoresponse and electrical behavior of the fabricated photodiodes were determined by current-voltage (I-V), transient photocurrent-time (I-t), capacitance-voltage (C-V), conductivity-voltage (G-V), and transient photocapacitance-time (C-t) measurements. All fabricated photodiodes were exhibited rectifying properties and the photocurrent values increased as the light intensity was increased. All photodiodes are sensitive to light and it was determined that the NiO photodiode exhibited the highest photosensitivity value. Photocapacitance and photoconductance values of photodiodes were affected by light. Photoresponse and electrical behavior were affected by the interface states and the NiO:CdO ratio. The results show that Al/NiO:CdO/p-Si/Al photodiodes can be used as photosensors or photocapacitors in optoelectronic applications.en_US
dc.description.sponsorshipFirat University Research Fund [FUBAP-TEKF.21.11]; Council of Higher Education (CoHE) [100/2000]en_US
dc.description.sponsorshipThe authors thank the Firat University Research Fund (FUBAP-TEKF.21.11) for their financial contribution to this research and the author Ezgi GURGENC would like to thank Council of Higher Education (CoHE) for its scholarship support with the 100/2000 Ph.D. scholarship.en_US
dc.identifier.doi10.1016/j.physb.2022.413981
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.urihttps://doi.org/10.1016/j.physb.2022.413981
dc.identifier.urihttps://hdl.handle.net/11616/103476
dc.identifier.volume639en_US
dc.identifier.wosWOS:000800458300005en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofPhysica B-Condensed Matteren_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectComposite photodiodeen_US
dc.subjectThin filmen_US
dc.subjectNanomaterialen_US
dc.subjectPhotoresponseen_US
dc.subjectSolar irradiationen_US
dc.titleInvestigation of structural, electrical and photoresponse properties of composite based Al/NiO:CdO/p-Si/Al photodiodesen_US
dc.typeArticleen_US

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