Adjustable tunneling barrier in bi-based high-Tc cross-whisker junctions

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dc.authoridkizilaslan, olcay/0000-0003-2528-433X
dc.authoridAksan, Mehmet Ali/0000-0001-9465-0319
dc.authoridSimsek, Yilmaz/0000-0001-6166-1441
dc.authoridMuller, Paul/0000-0002-5790-7653
dc.authorwosidMüller, Paul/IUN-0504-2023
dc.authorwosidkizilaslan, olcay/ABG-8465-2020
dc.authorwosidAksan, Mehmet Ali/AAE-8854-2021
dc.authorwosidkizilaslan, olcay/HLH-6089-2023
dc.authorwosidAksan, Mehmet Ali/AAA-4187-2021
dc.authorwosidSimsek, Yilmaz/E-1433-2019
dc.contributor.authorKizilaslan, O.
dc.contributor.authorSimsek, Y.
dc.contributor.authorAksan, M. A.
dc.contributor.authorKoval, Y.
dc.contributor.authorYakinci, M. E.
dc.contributor.authorMueller, P.
dc.date.accessioned2024-08-04T20:40:01Z
dc.date.available2024-08-04T20:40:01Z
dc.date.issued2015
dc.departmentİnönü Üniversitesien_US
dc.description.abstractWe present a study of cross-whisker junctions with electronically modified tunneling barriers. Cross-whisker junctions were successfully prepared by annealing two crossed Bi-based whisker bars at temperatures of around 840 degrees C. In addition to the artificially produced junction at the interface, intrinsic Josephson junctions in the respective bars of the cross were observed. The artificial junction exhibited reproducible and almost ideal junction characteristics. The tunneling barrier/interface properties were controlled by carrier injection in c-axis direction. Using this process, we were able to reduce the tunneling resistance from 408 Omega to 30 Omega. At the same time, the critical current did rise by a factor of 4. Subsequently, the critical current was doubled while the tunneling resistance stayed constant. We interpret this observation in terms of the counter-play between transparency of the barrier and the carrier concentration of the electrodes. In this sense, we can consider the current injection procedure as an electronic gluing process of the two cross-junction whisker bars.en_US
dc.description.sponsorshipScientific and Technological Research Council of Turkey [TUBITAK-114F203]en_US
dc.description.sponsorshipThis work was supported by Scientific and Technological Research Council of Turkey under contract no TUBITAK-114F203.en_US
dc.identifier.doi10.1088/0953-2048/28/2/025010
dc.identifier.issn0953-2048
dc.identifier.issn1361-6668
dc.identifier.issue2en_US
dc.identifier.scopus2-s2.0-84921033137en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.urihttps://doi.org/10.1088/0953-2048/28/2/025010
dc.identifier.urihttps://hdl.handle.net/11616/96657
dc.identifier.volume28en_US
dc.identifier.wosWOS:000351046300016en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherIop Publishing Ltden_US
dc.relation.ispartofSuperconductor Science & Technologyen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectintrinsic Josephson junctionen_US
dc.subjectcross-junctionen_US
dc.subjectcarrier-injectionen_US
dc.titleAdjustable tunneling barrier in bi-based high-Tc cross-whisker junctionsen_US
dc.typeArticleen_US

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