Effect of Bi deficiency on grain alignment of BiPb-2223 thin film fabricated using rf sputtering process and on critical current density properties

Basit Öğe Kaydı
dc.authoridALTIN, Serdar/0000-0002-4590-907X
dc.authoridAksan, Mehmet Ali/0000-0001-9465-0319
dc.authoridGULDESTE, Ayhan/0000-0003-4775-884X
dc.authorwosidALTIN, Serdar/H-4880-2014
dc.authorwosidbalci, yakup/AAA-4174-2021
dc.authorwosidAksan, Mehmet Ali/AAE-8854-2021
dc.authorwosidAksan, Mehmet Ali/AAA-4187-2021
dc.contributor.authorAksan, M. A.
dc.contributor.authorAltin, S.
dc.contributor.authorYakinci, M. E.
dc.contributor.authorGuldeste, A.
dc.contributor.authorBalci, Y.
dc.date.accessioned2024-08-04T20:32:41Z
dc.date.available2024-08-04T20:32:41Z
dc.date.issued2011
dc.departmentİnönü Üniversitesien_US
dc.description.abstractIn the present study, thin films prepared as a function of the Bi concentration in the BiPbSrCaCuO system were synthesised. Thin films were fabricated using radio frequency sputtering method. Crystal structure of the films fabricated was determined from X-ray diffraction measurements. The crystal orientation was analysed by X-ray pole figure and in-plane alignment. Both X-ray diffraction and pole figure analysis revealed that crystallinity in the films decreased significantly with decreasing Bi concentration in the system. A systematic decrease in the superconducting transition temperature and hole concentration per CuO plane was obtained with decreasing Bi concentration. The J(c) values of the films were calculated using Bean formula. It exhibits a significant dependence on the magnetic field and temperature. It was found that J(c) decreased sharply with increasing applied magnetic field. The highest J(c) value was found to be 1.06 x 10(6) A cm(-2) at 10 K, which corresponded to the best flux pinning among the films fabricated.en_US
dc.identifier.doi10.1179/026708309X12506933873549
dc.identifier.endpage319en_US
dc.identifier.issn0267-0836
dc.identifier.issn1743-2847
dc.identifier.issue1en_US
dc.identifier.scopus2-s2.0-78650851541en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage314en_US
dc.identifier.urihttps://doi.org/10.1179/026708309X12506933873549
dc.identifier.urihttps://hdl.handle.net/11616/95228
dc.identifier.volume27en_US
dc.identifier.wosWOS:000285870400054en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherTaylor & Francis Ltden_US
dc.relation.ispartofMaterials Science and Technologyen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectHigh T-c filmsen_US
dc.subjectCrystal growthen_US
dc.subjectX-ray pole figure diffractionen_US
dc.subjectCharge carriersen_US
dc.titleEffect of Bi deficiency on grain alignment of BiPb-2223 thin film fabricated using rf sputtering process and on critical current density propertiesen_US
dc.typeArticleen_US

Dosyalar

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu