Nanoscale thermal effect induced in situ Cu-based memristor

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dc.contributor.authorLin, Jianxin
dc.contributor.authorZhang, Chaoyun
dc.contributor.authorZhang, Tuo
dc.contributor.authorXiang, Shuo
dc.contributor.authorXiao, Songling
dc.contributor.authorZhang, Hao
dc.contributor.authorLiu, Yu
dc.date.accessioned2026-04-04T13:33:39Z
dc.date.available2026-04-04T13:33:39Z
dc.date.issued2026
dc.departmentİnönü Üniversitesi
dc.description.abstractMemristive devices are promising candidates for next-generation nonvolatile memory and neuromorphic computing. However, their large-scale integration is hindered by the complexity and cost of conventional fabrication methods. Here, we propose a simplified, single-step method for fabricating lateral Cu/CuxO/Cu memristors based on nano-laser direct writing. By exploiting the thermal gradient of focused laser beam, central oxidation of Cu film is induced, enabling the formation of sub-300 nm CuxO switching layers under ambient conditions. To elucidate the laser-Cu films interaction process, systematic mapping of laser parameters, combined with thermal simulations, revealed that laser power, pulse width, and writing width collectively determine the oxidation extent and device performance. Furthermore, optimized devices illustrate robust bipolar resistive switching with high/low resistance state ratios (similar to 10(2)), stable endurance over 100 cycles, and reliable conductance retention, which is vital for the modulation of RESET behavior and filament stability. Beyond binary switching, the devices exhibit analog conductance modulation under voltage pulses, demonstrating synaptic plasticity suitable for neuromorphic applications. To some extent, this work highlights nano-laser writing as a scalable, cost-effective strategy for fabricating high-density memristors and offers a promising route toward in situ integration of memristive elements for future brain-inspired electronics.
dc.description.sponsorship[3072025YC0401]; [525QN379]
dc.description.sponsorshipThis work was supported by the Fundamental Research Funds for the Central Universities (3072025YC0401) and the Hainan Provincial Natural Science Foundation of China (525QN379).
dc.identifier.doi10.1063/5.0301433
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issue5
dc.identifier.scopus2-s2.0-105029777341
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1063/5.0301433
dc.identifier.urihttps://hdl.handle.net/11616/109294
dc.identifier.volume128
dc.identifier.wosWOS:001681293700001
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherAip Publishing
dc.relation.ispartofApplied Physics Letters
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250329
dc.subjectFemtosecond
dc.subjectFabrication
dc.titleNanoscale thermal effect induced in situ Cu-based memristor
dc.typeArticle

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