Molecular design of POSS core star polyimides as a route to low-? dielectric materials
Küçük Resim Yok
Tarih
2008
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Science Sa
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Star polyimides incorporating the polyhedralsilsesquioxane (POSS-NH2) unit were prepared by in situ curing of polyamic acid macromolecules with amino POSS, octa (aminopropylsilsesquioxane), for the molecular-level design of low dielectric constant (low-kappa) materials that can be used to manufacture integrated circuits. Octameric POSS-NH2 having restricted rotation by multiple point attachment to the polyimide backbone is shown to introduce free volume into the films, thereby lowering their dielectric constants. A process for synthesizing POSS-polyimide star nanocomposites is reported, comprising a step forming porous-type POSS and subsequent step with polyimide precursor. The POSS-NH2 containing polyimides exhibit a number of desirable properties including low-water absorption and high thermal stability. Systematic studies demonstrate that proper insertion of POSS into a polyimide backbone can give rise to a reduction in the material's dielectric constant while also improving its mechanical and thermal properties. (C) 2008 Elsevier B.V. All rights reserved.
Açıklama
Anahtar Kelimeler
Chemical synthesis, Inorganic compounds, Electron microscopy, Dielectric properties
Kaynak
Materials Chemistry and Physics
WoS Q Değeri
Q2
Scopus Q Değeri
Q1
Cilt
112
Sayı
3
