INFRARED-ABSORPTION IN THICK-FILM RESISTORS

dc.authoridulug, bulent/0000-0003-1744-6861
dc.authorwosidulug, bulent/C-2988-2016
dc.contributor.authorULUG, B
dc.contributor.authorULUG, A
dc.contributor.authorSENER, E
dc.date.accessioned2024-08-04T20:11:50Z
dc.date.available2024-08-04T20:11:50Z
dc.date.issued1995
dc.departmentİnönü Üniversitesien_US
dc.description.abstractInfrared absorption in polymer and glass-based thick film resistors has been measured between 400 and 1500 cm(-1). Sam pie structures are discussed on the basis of X-ray, Fourier transform-infrared and resistance-temperature data. It is shown that in polymer-based thick film resistors, the particulate phase is mostly responsible for the infrared absorption between 400 and 900 cm(-1), whereas the infrared absorption at higher wave numbers is related to the continuous phase. In glass-based thick film resistors, absorption is mostly determined by the highly doped glass. The results indicate that thick film resistors can be used as an absorbent coating in the 400-1500 cm(-1) region by suitable selection of the continuous and particulate phases.en_US
dc.identifier.doi10.1007/BF00349878
dc.identifier.endpage3350en_US
dc.identifier.issn0022-2461
dc.identifier.issue13en_US
dc.identifier.scopus2-s2.0-0029342026en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.startpage3346en_US
dc.identifier.urihttps://doi.org/10.1007/BF00349878
dc.identifier.urihttps://hdl.handle.net/11616/93018
dc.identifier.volume30en_US
dc.identifier.wosWOS:A1995RJ36100007en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherChapman Hall Ltden_US
dc.relation.ispartofJournal of Materials Scienceen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectInsulatoren_US
dc.titleINFRARED-ABSORPTION IN THICK-FILM RESISTORSen_US
dc.typeArticleen_US

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