Barrier lowering effect and dark current characteristics in asymmetric GaAs/AlGaAs multi quantum well structure

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dc.authoridErgün, Yüksel/0000-0001-6816-1108
dc.authoridHokelek, Tuncer/0000-0002-8602-4382
dc.authoridAltin, Emine/0000-0002-2187-4036
dc.authoridHostut, Mustafa/0000-0002-9312-6483
dc.authorwosidALTIN, EMINE/AHE-9774-2022
dc.authorwosidErgün, Yüksel/AAK-8870-2020
dc.authorwosidhoştut, mustafa/K-3684-2019
dc.authorwosidHokelek, Tuncer/G-6068-2013
dc.authorwosidHokelek, Tuncer/JCE-0691-2023
dc.authorwosidHostut, Mustafa/C-2909-2016
dc.contributor.authorAltin, E.
dc.contributor.authorHostut, M.
dc.contributor.authorErgun, Y.
dc.date.accessioned2024-08-04T20:35:41Z
dc.date.available2024-08-04T20:35:41Z
dc.date.issued2011
dc.departmentİnönü Üniversitesien_US
dc.description.abstractIn this study, we investigate dark current voltage characteristics of GaAs/AlGaAs staircase-like asymmetric multiquantum well structure at various temperatures experimentally. The activation energy is calculated by using Arrhenius plots at different voltages. It is found that the activation energy decreased with increasing electric field. This result is evaluated using a barrier lowering effect which is a combination of geometrical and Poole-Frenkel effects. Measured dark current density-voltage (J-V) characteristics compared with the Levine model, 3D carrier drift model and the emission capture model. The best agreement with the experimental results of dark current densities is obtained by the Levine model.en_US
dc.description.sponsorshipTubitak [105T492]en_US
dc.description.sponsorshipThe authors, E. Altin and Y. Ergun, would like to thank Tubitak (Project no. 105T492) for the funding of this project. We would like to thank Dr. Bulent Aslan and Dr. Ugur Serincan for their assistance.en_US
dc.identifier.doi10.1007/s00339-011-6634-3
dc.identifier.endpage839en_US
dc.identifier.issn0947-8396
dc.identifier.issn1432-0630
dc.identifier.issue4en_US
dc.identifier.scopus2-s2.0-83555173245en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage833en_US
dc.identifier.urihttps://doi.org/10.1007/s00339-011-6634-3
dc.identifier.urihttps://hdl.handle.net/11616/95509
dc.identifier.volume105en_US
dc.identifier.wosWOS:000297162000007en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringer Heidelbergen_US
dc.relation.ispartofApplied Physics A-Materials Science & Processingen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subject[No Keywords]en_US
dc.titleBarrier lowering effect and dark current characteristics in asymmetric GaAs/AlGaAs multi quantum well structureen_US
dc.typeArticleen_US

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