Dark current and optical properties in asymmetric GaAs/AlGaAs staircase-like multiquantum well structure

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dc.authoridHokelek, Tuncer/0000-0002-8602-4382
dc.authoridErgün, Yüksel/0000-0001-6816-1108
dc.authoridHostut, Mustafa/0000-0002-9312-6483
dc.authoridAltin, Emine/0000-0002-2187-4036
dc.authorwosidhoştut, mustafa/K-3684-2019
dc.authorwosidHokelek, Tuncer/JCE-0691-2023
dc.authorwosidHokelek, Tuncer/G-6068-2013
dc.authorwosidErgün, Yüksel/AAK-8870-2020
dc.authorwosidALTIN, EMINE/AHE-9774-2022
dc.authorwosidHostut, Mustafa/C-2909-2016
dc.contributor.authorAltin, E.
dc.contributor.authorHostut, M.
dc.contributor.authorErgun, Y.
dc.date.accessioned2024-08-04T20:37:28Z
dc.date.available2024-08-04T20:37:28Z
dc.date.issued2013
dc.departmentİnönü Üniversitesien_US
dc.description.abstractIn this study, we investigate dark current voltage characteristics of GaAs/AlGaAs staircase-like asymmetric multiquantum well structure at various temperatures experimentally. Measured dark current density voltage (J(d)-V) characteristics are compared with the Levine Model. It is seen that the model fits well with the experimental dark current density. Ground state energy of electrons, heavy holes and light holes are calculated by Kronig Penney Model. Optical properties of sample are characterized by photoluminescence and photoconductivity measurements. The temperature-dependent photoluminescence (PL) spectra of the GaAs/GaAlAs QWIP show that the peaks corresponding interband transition from the ground heavy-hole subband to the ground electronic subband (E-hh1 - E-e1) are dominantly observed and the peak positions corresponding to the interband transitions of the PL spectrum are dependent on the temperature. Photoconductivity measurement is performed for different negative polarities at 37 K. (C) 2013 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipTubitak [105T492]en_US
dc.description.sponsorshipThe authors E. Altin and Y. Ergun would like to thank Tubitak (Project no. 105T492) for funding of this project.en_US
dc.identifier.doi10.1016/j.infrared.2012.12.043
dc.identifier.endpage79en_US
dc.identifier.issn1350-4495
dc.identifier.issn1879-0275
dc.identifier.scopus2-s2.0-84875205874en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage74en_US
dc.identifier.urihttps://doi.org/10.1016/j.infrared.2012.12.043
dc.identifier.urihttps://hdl.handle.net/11616/95989
dc.identifier.volume58en_US
dc.identifier.wosWOS:000318135000013en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofInfrared Physics & Technologyen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectDark currenten_US
dc.subjectQWIPen_US
dc.subjectPhotoluminescenceen_US
dc.subjectPhotoconductivityen_US
dc.titleDark current and optical properties in asymmetric GaAs/AlGaAs staircase-like multiquantum well structureen_US
dc.typeArticleen_US

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