In-situ single chamber arc sputtering process for YCd0.3Ba2Cu3O7-? superconducting thin films
dc.authorid | Aksan, Mehmet Ali/0000-0001-9465-0319 | |
dc.authorid | AYDOGDU, YILDIRIM/0000-0002-1115-0691 | |
dc.authorwosid | Aksan, Mehmet Ali/AAE-8854-2021 | |
dc.authorwosid | balci, yakup/AAA-4174-2021 | |
dc.authorwosid | Aksan, Mehmet Ali/AAA-4187-2021 | |
dc.contributor.author | Yakinci, ME | |
dc.contributor.author | Balci, Y | |
dc.contributor.author | Aksan, MA | |
dc.contributor.author | Aydogdu, Y | |
dc.contributor.author | Ates, H | |
dc.date.accessioned | 2024-08-04T20:13:23Z | |
dc.date.available | 2024-08-04T20:13:23Z | |
dc.date.issued | 1999 | |
dc.department | İnönü Üniversitesi | en_US |
dc.description | International Conference on Physics and Chemistry of Molecular and Oxide Superconductors (MOS-99) -- JUL 28-AUG 02, 1999 -- ROYAL INST TECHNOL, STOCKHOLM, SWEDEN | en_US |
dc.description.abstract | Superconducting YCd0.3Ba2Cu3O7-delta thin films have been deposited in-situ onto single crystal MgO substrates using a DC arc-sputtering process. The depositions were carried out in a single chamber deposition system equipped with two target holders. The films deposited at the optimum condition exhibited strong (001) orientation with a high peak: intensity. The best electrical properties were achieved to be 90 K for T-e, 81K for T-zero and the transport critical current density J(c) = 675 A/cm(2) at 77K and 2.3x10(3) A/cm(2) at 4.2 K for the sample deposited at the optimum conditions. | en_US |
dc.description.sponsorship | Royal Inst Technol,Royal Swedish Acad Sci,Swedish Nat Sci,Engn Sci Res Councils,SAS,Gran Gustafsson Fdn,City of Stockholm | en_US |
dc.identifier.doi | 10.1023/A:1022516421808 | |
dc.identifier.endpage | 649 | en_US |
dc.identifier.issn | 0022-2291 | |
dc.identifier.issue | 3-4 | en_US |
dc.identifier.scopus | 2-s2.0-0042044121 | en_US |
dc.identifier.scopusquality | N/A | en_US |
dc.identifier.startpage | 645 | en_US |
dc.identifier.uri | https://doi.org/10.1023/A:1022516421808 | |
dc.identifier.uri | https://hdl.handle.net/11616/93589 | |
dc.identifier.volume | 117 | en_US |
dc.identifier.wos | WOS:000084373900078 | en_US |
dc.identifier.wosquality | Q3 | en_US |
dc.indekslendigikaynak | Web of Science | en_US |
dc.indekslendigikaynak | Scopus | en_US |
dc.language.iso | en | en_US |
dc.publisher | Kluwer Academic/Plenum Publ | en_US |
dc.relation.ispartof | Journal of Low Temperature Physics | en_US |
dc.relation.publicationcategory | Konferans Öğesi - Uluslararası - Kurum Öğretim Elemanı | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | [No Keywords] | en_US |
dc.title | In-situ single chamber arc sputtering process for YCd0.3Ba2Cu3O7-? superconducting thin films | en_US |
dc.type | Conference Object | en_US |