Electrical characterization of ZnO/NiO p-n junction prepared by the sol-gel method
Küçük Resim Yok
Tarih
2017
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer Heidelberg
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
ZnO and NiO films were synthesized on fluourine-doped tin oxide (FTO) glass substrate by the sol-gel method. The surface morphology of the films was investigated by atomic force microscopy. The optical band gaps of the ZnO and NiO films were found to be 3.198 and 3.827eV, respectively. A ZnO/NiO p-n junction diode was prepared and electrical charge transport mechanism of the diode was analyzed using thermionic emission and Norde functions. The ideality factor, barrier height and series resistance of the diode were determined to be 6.46, 1.036eV and 39.1 M , respectively. The obtained results indicate that ZnO/NiO p-n junction can be used as transparent diode for optic communications.
Açıklama
Anahtar Kelimeler
Thin-Films, Fabrication, Nio
Kaynak
European Physical Journal Plus
WoS Q Değeri
Q2
Scopus Q Değeri
Cilt
132
Sayı
4
