Electrical characterization of ZnO/NiO p-n junction prepared by the sol-gel method

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dc.authoridGultek, Ahmet/0000-0002-4980-1568
dc.authoridHendi, Awatif A./0000-0002-8729-1925
dc.authoridDağdelen, Fethi/0000-0001-9849-590X;
dc.authorwosidGultek, Ahmet/AAG-5735-2019
dc.authorwosidHendi, Awatif A./HGA-5098-2022
dc.authorwosidDağdelen, Fethi/T-7902-2018
dc.authorwosidYakuphanoglu, Fahrettin/C-8365-2012
dc.contributor.authorAkyuzlu, A. Merih
dc.contributor.authorDagdelen, Fethi
dc.contributor.authorGultek, Ahmet
dc.contributor.authorHendi, A. A.
dc.contributor.authorYakuphanoglu, Fahrettin
dc.date.accessioned2024-08-04T20:58:38Z
dc.date.available2024-08-04T20:58:38Z
dc.date.issued2017
dc.departmentİnönü Üniversitesien_US
dc.description.abstractZnO and NiO films were synthesized on fluourine-doped tin oxide (FTO) glass substrate by the sol-gel method. The surface morphology of the films was investigated by atomic force microscopy. The optical band gaps of the ZnO and NiO films were found to be 3.198 and 3.827eV, respectively. A ZnO/NiO p-n junction diode was prepared and electrical charge transport mechanism of the diode was analyzed using thermionic emission and Norde functions. The ideality factor, barrier height and series resistance of the diode were determined to be 6.46, 1.036eV and 39.1 M , respectively. The obtained results indicate that ZnO/NiO p-n junction can be used as transparent diode for optic communications.en_US
dc.description.sponsorshipManagement Unit of Scientific Research projects of Firat University (FUBAP) [FF.13.08]en_US
dc.description.sponsorshipThis work was supported by the Management Unit of Scientific Research projects of Firat University (FUBAP) (Project Number: FF.13.08).en_US
dc.identifier.doi10.1140/epjp/i2017-11442-8
dc.identifier.issn2190-5444
dc.identifier.issue4en_US
dc.identifier.urihttps://doi.org/10.1140/epjp/i2017-11442-8
dc.identifier.urihttps://hdl.handle.net/11616/103034
dc.identifier.volume132en_US
dc.identifier.wosWOS:000400067300001en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.language.isoenen_US
dc.publisherSpringer Heidelbergen_US
dc.relation.ispartofEuropean Physical Journal Plusen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectThin-Filmsen_US
dc.subjectFabricationen_US
dc.subjectNioen_US
dc.titleElectrical characterization of ZnO/NiO p-n junction prepared by the sol-gel methoden_US
dc.typeArticleen_US

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