Hydrogen detection and electrical properties of titanium silicate Schottky diode fabricated by RF-magnetron sputtering method
Küçük Resim Yok
Tarih
2025
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Pergamon-Elsevier Science Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In this study, the electrical characterization of Schottky contact produced by coating TiSiO4 from the perovskite like layered family on p and n type Si by using RF-magnetron sputtering method was investigated depending on gas atmosphere and temperature. The morphological structure of the TiSiO4 thin film was examined by XRD analysis, FE-SEM images, and EDX spectrum. According to AFM images, the average roughness was found to be 0.811 nm. Temperature dependent I-V and AC characteristics of p-Si/TiSiO4 and n-Si/TiSiO4 devices were measured under dry air flow. In addition, frequency dependent C-V measurements of the devices were performed to investigate the capacitance properties of the scheelite-type interface. Also, the sensor response obtained with this device was as high as 267.7. Hydrogen sensing properties of p-Si/TiSiO4/Pt structure were investigated depending on concentration, temperature and interference gases. Electrical parameters with p type Si provided better results. The p-Si/TiSiO4/Pt sensor device showed Schottky behavior at low temperatures, but the device changed to ohmic behavior with increasing temperature.
Açıklama
Anahtar Kelimeler
RF-Magnetron sputtering, Hydrogen sensor, Electrical characterization, Perovskite like layers, Scheelite-type structure, TiSiO4
Kaynak
International Journal of Hydrogen Energy
WoS Q Değeri
Q1
Scopus Q Değeri
Q1
Cilt
144
