Hydrogen detection and electrical properties of titanium silicate Schottky diode fabricated by RF-magnetron sputtering method

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dc.contributor.authorTasyurek, Lutfi Bilal
dc.contributor.authorKilinc, Necmettin
dc.date.accessioned2026-04-04T13:35:02Z
dc.date.available2026-04-04T13:35:02Z
dc.date.issued2025
dc.departmentİnönü Üniversitesi
dc.description.abstractIn this study, the electrical characterization of Schottky contact produced by coating TiSiO4 from the perovskite like layered family on p and n type Si by using RF-magnetron sputtering method was investigated depending on gas atmosphere and temperature. The morphological structure of the TiSiO4 thin film was examined by XRD analysis, FE-SEM images, and EDX spectrum. According to AFM images, the average roughness was found to be 0.811 nm. Temperature dependent I-V and AC characteristics of p-Si/TiSiO4 and n-Si/TiSiO4 devices were measured under dry air flow. In addition, frequency dependent C-V measurements of the devices were performed to investigate the capacitance properties of the scheelite-type interface. Also, the sensor response obtained with this device was as high as 267.7. Hydrogen sensing properties of p-Si/TiSiO4/Pt structure were investigated depending on concentration, temperature and interference gases. Electrical parameters with p type Si provided better results. The p-Si/TiSiO4/Pt sensor device showed Schottky behavior at low temperatures, but the device changed to ohmic behavior with increasing temperature.
dc.description.sponsorshipTUBITAK, Ankara, Turkiye [121C433]; Inonu University BAP, Malatya, Turkiye [FBA 2024-3421]
dc.description.sponsorshipThis study was partially funded by TUBITAK, Ankara, Turkiye; (Project Number: 121C433) and Inonu University BAP, Malatya, Turkiye (Project Number: FBA 2024-3421).
dc.identifier.doi10.1016/j.ijhydene.2025.03.135
dc.identifier.endpage745
dc.identifier.issn0360-3199
dc.identifier.issn1879-3487
dc.identifier.orcid0000-0003-0607-648X
dc.identifier.scopus2-s2.0-105000166178
dc.identifier.scopusqualityQ1
dc.identifier.startpage738
dc.identifier.urihttps://doi.org/10.1016/j.ijhydene.2025.03.135
dc.identifier.urihttps://hdl.handle.net/11616/109577
dc.identifier.volume144
dc.identifier.wosWOS:001519038000001
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherPergamon-Elsevier Science Ltd
dc.relation.ispartofInternational Journal of Hydrogen Energy
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250329
dc.subjectRF-Magnetron sputtering
dc.subjectHydrogen sensor
dc.subjectElectrical characterization
dc.subjectPerovskite like layers
dc.subjectScheelite-type structure
dc.subjectTiSiO4
dc.titleHydrogen detection and electrical properties of titanium silicate Schottky diode fabricated by RF-magnetron sputtering method
dc.typeArticle

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