Interface structures and electrical properties of W/Si films grown by LPCVD
Küçük Resim Yok
Tarih
1996
Yazarlar
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Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Interface structures of W films on Si(100) substrates grown by LPCVD from a mixture of WF6, H2 and SiH4 (silane) gases at 280°C have been studied by transmission electron microscopy. Cross-sectional and plan-view samples were prepared to characterize the films. Consequently, according to the growth conditions, it has been observed that the W-Si interfaces are rough on a fine scale with some more extensive W protrusions in one of the samples which had an extended initial exposure to WF6. The W films have exhibited many randomly oriented grains ranging between 1000 and 4500 Å in size. Sheet resistance measurements have also been evaluated by means of four-point contact method at low temperatures (47-300 K) and it has been detected that the sheet resistance of a film decreases as the temperature decreases. © Tübi?tak.
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Kaynak
Turkish Journal of Physics
WoS Q Değeri
Scopus Q Değeri
Q3
Cilt
20
Sayı
7
