Interface structures and electrical properties of W/Si films grown by LPCVD

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dc.authorscopusid6602212203
dc.authorscopusid6603352503
dc.authorscopusid6603725876
dc.authorscopusid55968275900
dc.contributor.authorAtici Y.
dc.contributor.authorYakinci M.E.
dc.contributor.authorUlu? B.
dc.contributor.authorAydo?du Y.
dc.date.accessioned2024-08-04T20:00:53Z
dc.date.available2024-08-04T20:00:53Z
dc.date.issued1996
dc.departmentİnönü Üniversitesien_US
dc.description.abstractInterface structures of W films on Si(100) substrates grown by LPCVD from a mixture of WF6, H2 and SiH4 (silane) gases at 280°C have been studied by transmission electron microscopy. Cross-sectional and plan-view samples were prepared to characterize the films. Consequently, according to the growth conditions, it has been observed that the W-Si interfaces are rough on a fine scale with some more extensive W protrusions in one of the samples which had an extended initial exposure to WF6. The W films have exhibited many randomly oriented grains ranging between 1000 and 4500 Å in size. Sheet resistance measurements have also been evaluated by means of four-point contact method at low temperatures (47-300 K) and it has been detected that the sheet resistance of a film decreases as the temperature decreases. © Tübi?tak.en_US
dc.identifier.endpage759en_US
dc.identifier.issn1300-0101
dc.identifier.issue7en_US
dc.identifier.scopus2-s2.0-19444363966en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage753en_US
dc.identifier.urihttps://hdl.handle.net/11616/91069
dc.identifier.volume20en_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.relation.ispartofTurkish Journal of Physicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subject[No Keyword]en_US
dc.titleInterface structures and electrical properties of W/Si films grown by LPCVDen_US
dc.typeArticleen_US

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