Titanium nitride thin films grown by ion beam physical vapor deposition
Küçük Resim Yok
Tarih
2025
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Aip Publishing
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
A novel ion beam physical vapor deposition technique has been developed for TiN thin film deposition. The method uses only standard surface science tools, namely a cold cathode ion gun (normally used for sputter cleaning with Ar) operated with N2 gas and a modified titanium sublimation pump as a Ti PVD source. TiN thin films were deposited onto semi-insulating GaAs (001) substrates, and their physical and electrical properties were measured. X-ray photoelectron spectroscopy suggested predominantly TiN bonding with some oxynitride components. The DC conductivity increased in the range of 200-350 S/cm at temperatures ranging from 300 to 430 K. The behavior was consistent with the correlated barrier hopping model with an activation energy of 0.043 eV. The AC measurements (40 Hz to 0.2 MHz) indicated lower impedance above 10 kHz, possibly from the reduced effect of polarization at grain boundaries and other extended defects. The DC temperature dependence was also maintained even at the highest frequencies. (c) 2025 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license(https://creativecommons.org/licenses/by/4.0/).
Açıklama
Anahtar Kelimeler
Electrical-Properties, Stainless-Steel, Tin, Stimulation, Zirconium, Coatings, Layer, Xps
Kaynak
Apl Materials
WoS Q Değeri
Q2
Scopus Q Değeri
N/A
Cilt
13
Sayı
8
