Titanium nitride thin films grown by ion beam physical vapor deposition

dc.contributor.authorIsik, Esme
dc.contributor.authorSterland, Dominic
dc.contributor.authorKilinc, Necmettin
dc.contributor.authorBell, Gavin R.
dc.date.accessioned2026-04-04T13:33:39Z
dc.date.available2026-04-04T13:33:39Z
dc.date.issued2025
dc.departmentİnönü Üniversitesi
dc.description.abstractA novel ion beam physical vapor deposition technique has been developed for TiN thin film deposition. The method uses only standard surface science tools, namely a cold cathode ion gun (normally used for sputter cleaning with Ar) operated with N2 gas and a modified titanium sublimation pump as a Ti PVD source. TiN thin films were deposited onto semi-insulating GaAs (001) substrates, and their physical and electrical properties were measured. X-ray photoelectron spectroscopy suggested predominantly TiN bonding with some oxynitride components. The DC conductivity increased in the range of 200-350 S/cm at temperatures ranging from 300 to 430 K. The behavior was consistent with the correlated barrier hopping model with an activation energy of 0.043 eV. The AC measurements (40 Hz to 0.2 MHz) indicated lower impedance above 10 kHz, possibly from the reduced effect of polarization at grain boundaries and other extended defects. The DC temperature dependence was also maintained even at the highest frequencies. (c) 2025 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license(https://creativecommons.org/licenses/by/4.0/).
dc.description.sponsorshipScientific and Technological Research Council of Turkiye [1059B192001338]
dc.description.sponsorshipThe present work was supported by the Scientific and Technological Research Council of Turkiye with the 2219 - International Postdoctoral Research Fellowship Program with Project ID: 1059B192001338.
dc.identifier.doi10.1063/5.0268865
dc.identifier.issn2166-532X
dc.identifier.issue8
dc.identifier.orcid0000-0002-6687-7660
dc.identifier.orcid0000-0003-2123-2938
dc.identifier.scopus2-s2.0-105013308114
dc.identifier.scopusqualityN/A
dc.identifier.urihttps://doi.org/10.1063/5.0268865
dc.identifier.urihttps://hdl.handle.net/11616/109295
dc.identifier.volume13
dc.identifier.wosWOS:001554124300001
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherAip Publishing
dc.relation.ispartofApl Materials
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_WOS_20250329
dc.subjectElectrical-Properties
dc.subjectStainless-Steel
dc.subjectTin
dc.subjectStimulation
dc.subjectZirconium
dc.subjectCoatings
dc.subjectLayer
dc.subjectXps
dc.titleTitanium nitride thin films grown by ion beam physical vapor deposition
dc.typeArticle

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